Hot Excitons Contribution into the Photoluminescence of Self-Assembled Quantum Dots in CdSe/ZnSe Heterostructures under Different Excitation Conditions

Journal Article · Sat Dec 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618140051· OSTI ID:22945163

Reznitsky, A. N. ^[1]

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1. Ioffe Institute (Russian Federation)

“We present experimental and theoretical study of the photoluminescence in a set of double asymmetric CdSe/ZnSe quantum wells with self-assembled quantum dots separated by rather thick ZnSe barrier. It is found that for a certain ratio between depths of quantum wells hot exciton channel in the photoluminescence excitation spectrum of shallow well is dominant up to the energy interval exceeding 10 longitudinal optical phonons above the bottom of the exciton zone of the ZnSe. A model of the electrons, holes, and excitons transfer within the system of asymmetric quantum wells is developed. We demonstrate that the prevailing of the exciton channel is due to different rate of transitions between quantum wells of excitons and single charge carriers”.

• OSTI ID: 22945163
• Journal Information: Semiconductors, Vol. 52, Issue 14; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
CADMIUM SELENIDES
CHARGE CARRIERS
ELECTRONS
EXCITATION
EXCITONS
PHONONS
PHOTOLUMINESCENCE
QUANTUM DOTS
QUANTUM WELLS
ZINC SELENIDES