MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al{sub 2}O{sub 3}
- Stepanov Institute of Physics of National Academy of Sciences of Belarus (Belarus)
- SemiTEq JSC (Russian Federation)
The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substrate temperature for growth of GaN and AlGaN layers was determined analyzing thermal decomposition rate of GaN. Based on the information, high electron mobility transistor heterostructures were grown on sapphire substrates using both ammonia and combined plasma-assisted/ammonia MBE modes. The highest achieved 2DEG mobility was 1992 cm{sup 2}/(V s) (at 2DEG density of 1.17 × 10{sup 13} cm{sup –2}) which is the current state-of-the-art level.
- OSTI ID:
- 22945104
- Journal Information:
- Semiconductors, Vol. 52, Issue 16; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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