Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies
Journal Article
·
· Semiconductors (Woodbury, N.Y., Print)
- Ioffe Institute (Russian Federation)
- ITMO University (Russian Federation)
Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombination rates, frequently used in publications. It is shown that the nonparabolicity of the electronic structure should be taken into account in calculations of the recombination rates. As an example, the temperature dependences of the charge-carrier lifetimes governed by radiative and non-radiative processes are calculated for InAsSb solid solutions.
- OSTI ID:
- 22945040
- Journal Information:
- Semiconductors (Woodbury, N.Y., Print), Journal Name: Semiconductors (Woodbury, N.Y., Print) Journal Issue: 4 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature dependence of the carrier lifetime in narrow-gap Cd{sub x}Hg{sub 1–x}Te solid solutions: Radiative recombination
Temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions with consideration for Auger processes
Radiative recombination of hot carriers in narrow-gap semiconductors
Journal Article
·
Tue Sep 15 00:00:00 EDT 2015
· Semiconductors
·
OSTI ID:22469800
Temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions with consideration for Auger processes
Journal Article
·
Wed Apr 15 00:00:00 EDT 2015
· Semiconductors
·
OSTI ID:22469989
Radiative recombination of hot carriers in narrow-gap semiconductors
Journal Article
·
Sat Jan 14 23:00:00 EST 2012
· Semiconductors
·
OSTI ID:22039058