Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application
- PG and Research Department of Physics, Arul Anandar College (India)
Aluminum doped zinc oxide (AZO) thin film was prepared by sol–gel dip coating method from methanol and monoethanolamine respectively, used as solvent and stabilizer agent. From the XRD study, it was confirmed that the aluminum was incorporated into the ZnO lattice. The prepared film have polycrystalline in nature and the film exhibit hexagonal wurtzite structure with (002) direction. SEM and AFM studies showed well defined smooth and uniformed wrinkle shaped grains distributed regularly on to the entire glass substrate without any pinholes and cracks. From the optical study, the observed highest transmittance was about 82% in the visible range and the band gap is 3.15 eV. Room temperature PL spectra exhibited a strong UV emission peak located at 390 nm for the deposited film. The electrical properties of the AZO thin film was studied by Hall-Effect measurement and found that it has n-type conductivity with low resistivity (ρ) of about 9.06 × 10{sup –3} Ω cm.
- OSTI ID:
- 22945036
- Journal Information:
- Semiconductors (Woodbury, N.Y., Print), Vol. 53, Issue 4; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ATOMIC FORCE MICROSCOPY
CRACKS
DEPOSITS
DIP COATING
DOPED MATERIALS
ELECTRICAL PROPERTIES
GLASS
HALL EFFECT
METHANOL
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SOL-GEL PROCESS
SOLVENTS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
ZINC OXIDES