Thermoelectric and Galvanomagnetic Properties of Layered n-Bi_2-xSb_xTe_3-ySe_y Films

Journal Article · Wed May 15 00:00:00 EDT 2019 · Semiconductors

DOI:https://doi.org/10.1134/S1063782619050154· OSTI ID:22945018

Usov, O. A.; Volkov, M. P. ^[1]

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1. Ioffe Institute (Russian Federation)

The thermoelectric properties in the temperature range 4.2–300 K and magnetoresistance oscillations in strong magnetic fields at low temperatures are studied in nanostructured layered films of topological thermoelectric materials n-Bi_2-xSb_xTe_3-ySe_y. It is shown that the thermoelectric figure of merit in layered n-Bi_2-xSb_xTe_3-ySe_y films is larger than that in the bulk material due both to an increase in the Seebeck coefficient below room temperature and to a decrease in the thermal conductivity and its weaker temperature dependence. Analysis of the magnetoresistance oscillations is used to determine the parameters of the topological surface states of Dirac fermions and estimate their influence on the thermoelectric properties.

• OSTI ID: 22945018
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 53; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
BISMUTH COMPLEXES
FERMIONS
MAGNETIC FIELDS
MAGNETORESISTANCE
NANOSTRUCTURES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
THERMOELECTRIC MATERIALS
THERMOELECTRIC PROPERTIES
THIN FILMS