Defects in Arsenic Implanted р{sup +}–n- and n{sup +}–p- Structures Based on MBE Grown CdHgTe Films

Journal Article · Thu Feb 15 00:00:00 EST 2018 · Russian Physics Journal

DOI:https://doi.org/10.1007/S11182-018-1278-9· OSTI ID:22863452

Izhnin, I. I., E-mail: [e-mail]; Fitsych, E. I., E-mail: [e-mail] ^[1]; Voitsekhovskii, A. V., E-mail: [e-mail]; Korotaev, A. G., E-mail: [e-mail] ^[2]; Mynbaev, K. D., E-mail: [e-mail] ^[3]; Varavin, V. S., E-mail: [e-mail] ^[4]; Dvoretsky, S. A., E-mail: [e-mail] ^[2]; Mikhailov, N. N., E-mail: [e-mail]; Yakushev, M. V., E-mail: [e-mail] ^[4]; Bonchyk, A. Yu., E-mail: [e-mail]; Savytskyy, H. V., E-mail: [e-mail] ^[5]; Świątek, Z., E-mail: [e-mail] ^[6]

---

1. Scientific Research Company “Carat” (Ukraine)
2. National Research Tomsk State University (Russian Federation)
3. Ioffe Physical-Technical Institute of the Russian Academy of Sciences (Russian Federation)
4. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences (Russian Federation)
5. National Academy of Sciences of Ukraine, Ya. S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine)
6. Institute of Metallurgy and Materials Science of the Polish Academy of Sciences (Poland)

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd{sub x}Hg{sub 1–x}Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n{sup +}–p- and n{sup +}–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p{sup +}–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

• OSTI ID: 22863452
• Journal Information: Russian Physics Journal, Vol. 60, Issue 10; Other Information: Copyright (c) 2018 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1064-8887
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
ARSENIC
DEFECTS
DENSITY
IMPURITIES
ION IMPLANTATION
ION MICROPROBE ANALYSIS
KEV RANGE
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
OPTICAL REFLECTION
P-TYPE CONDUCTORS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VISIBLE SPECTRA