Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current

Journal Article · Fri Jun 15 04:00:00 EDT 2018 · Journal of Materials Engineering and Performance

DOI:https://doi.org/10.1007/S11665-018-3144-X· OSTI ID:22860480

Kumari, Tripty; Saha, Priyanka; Dash, Dinesh Kumar; Sarkar, Subir Kumar ^[1]

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1. MVGR College of Engineering, Department of Electronics & Communication Engineering (India)

The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply voltage. However, the main challenging issue associated with realizing TFET for wide scale applications is its low ON current. To overcome this, a dual gate material with the concept of dielectric engineering has been incorporated into conventional TFET structure to tune the tunneling width at source–channel interface allowing significant flow of carriers. In addition to this, N+ pocket is implanted at source–channel junction of the proposed structure and the effect of strain is added for exploring the performance of the model in nanoscale regime. All these added features upgrade the device characteristics leading to higher ON current, low leakage and low threshold voltage. The present work derives the surface potential, electric field expression and drain current by solving 2D Poisson’s equation at different boundary conditions. A comparative analysis of proposed model with conventional TFET has been done to establish the superiority of the proposed structure. All analytical results have been compared with the results obtained in SILVACO ATLAS device simulator to establish the accuracy of the derived analytical model.

• OSTI ID: 22860480
• Journal Information: Journal of Materials Engineering and Performance, Journal Name: Journal of Materials Engineering and Performance Journal Issue: 6 Vol. 27; ISSN 1059-9495; ISSN JMEPEG
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOUNDARY CONDITIONS
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
DIELECTRIC MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
FIELD EFFECT TRANSISTORS
LEAKAGE CURRENT
NANOSTRUCTURES
SEMICONDUCTOR JUNCTIONS
SIMULATORS
STRAINS
SURFACE POTENTIAL
TUNNEL EFFECT