Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures

Xue, Feng; Hou, Yusheng; Wang, Zhe; Xu, Zhiming; He, Ke; Wu, Ruqian; Xu, Yong; Duan, Wenhui

doi:10.1093/nsr/nwad151

Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures

Journal Article · Thu May 25 00:00:00 EDT 2023 · National Science Review

DOI:https://doi.org/10.1093/nsr/nwad151· OSTI ID:2283601

Xue, Feng; Hou, Yusheng; Wang, Zhe; Xu, Zhiming; ; Wu, Ruqian; ;

ABSTRACT

The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; FG02-05ER46237

OSTI ID:: 2283601

Alternate ID(s):: OSTI ID: 2472184
OSTI ID: 2263268

Journal Information:: National Science Review, Journal Name: National Science Review Journal Issue: 3 Vol. 11; ISSN 2095-5138

Publisher:: Oxford University PressCopyright Statement

Country of Publication:: China

Language:: English

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