High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging
- Univ. of Michigan, Ann Arbor, MI (United States)
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Leonardo Electronics Inc., Tucson, AZ (United States)
Here, we study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- AC52-07NA27344
- OSTI ID:
- 2280901
- Report Number(s):
- LLNL-JRNL-839880; 1060418
- Journal Information:
- IEEE Journal of Quantum Electronics, Vol. 60, Issue 1; ISSN 0018-9197
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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