Correlation between structure and microwave dielectric properties of low-temperature-fired Mg2SiO4 ceramics
Journal Article
·
· Materials Research Bulletin
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
- Medical Institute Department, Sichuan College of Traditional Chinese Medicine, Mianyang 621000 (China)
Highlights: • Mg{sub 2}SiO{sub 4}–xLiF ceramics could be sintered at 900 °C. • The microwave dielectric properties were significantly dependent on the structure. • The following optimum properties were achieved in the x = 8 wt% ceramics. • Temperature stability of Mg{sub 2}SiO{sub 4}–8 wt% LiF–6.0vol% CaTiO{sub 3} ceramics was obtained. • These ceramics also exhibited excellent chemical compatibility with Ag. - Abstract: Mg{sub 2}SiO{sub 4}–LiF ceramics were fabricated via a conventional solid-state process and sintered at 900 °C. The secondary phase, Li{sub 2}SiO{sub 3}, was observed with ≤6 wt% LiF, and the Li{sub 2}MgSiO{sub 4} phase was detected with ≥8 wt% LiF. The relative density and secondary phase can account for the decrease in the ε{sub r} with an increase in LiF. The degree of crystallization, unit cell volume, secondary phase, and microstructure correlated with the Q × f values. The value of the τ{sub f} was related to the distortions in the Mg(1)O{sub 6} octahedron and the secondary phase. The sample exhibited excellent properties for Mg{sub 2}SiO{sub 4}–8 wt% LiF with ε{sub r} = 6.1, Q × f = 109719 GHz, and τ{sub f} = − 61 ppm/°C. The temperature stability of the Mg{sub 2}SiO{sub 4}–8 wt%LiF–6 vol%CaTiO{sub 3} ceramics was obtained with ε{sub r} = 7.1, Q × f = 31091 GHz and τ{sub f} = − 2.0 ppm/°C. Mg{sub 2}SiO{sub 4}–LiF–CaTiO{sub 3} ceramics provide excellent chemical compatibility with Ag.
- OSTI ID:
- 22805466
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 99; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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