Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films
- Department of Physics, Manipal Institute of Technology, Manipal University 576104 (India)
Highlights: • ZnS thin films grown by PVD technique have exhibited zinc blend structure. • Annealing resulted in blue shift in the band gap. • Shift in Raman peak on annealing is effect of crystallite size and strain. • PL spectra has characterized impurity states in mid-band gap region. - Abstract: Structural, optical and emission characteristics of the physical vapor deposited (PVD) ZnS films were investigated. Refined patterns of x-ray diffractogram (XRD) revealed that the grown films have zinc blende (ZB) structure with preferential orientation along (111) plane. Optical spectrograph was analyzed to derive various optical parameters, including optical band gap, which assess the device suitability of grown films. Raman spectra, fitted with Lorentzian peak, provided insight on frequency shift as an effect of elastic and thermal strains. Intensified peaks in photoluminescence spectra reflected observable recombination process due to larger band gap and assisted in study of defect-states in the grown films. In brief, the paper reports on influence of thickness and post deposition annealing on film characteristics analyzed through spectroscopic techniques.
- OSTI ID:
- 22805204
- Journal Information:
- Materials Research Bulletin, Vol. 105; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoluminescence study of Mn doped ZnS nanoparticles prepared by co-precipitation method
Effects of zinc salts on the structural and optical properties of acidic chemical bath deposited ZnS thin films