Magnetic Field Enhancement of Organic Light‐Emitting Diodes Based on Electron Donor–Acceptor Exciplex

Basel, Tek; Sun, Dali; Baniya, Sangita; McLaughlin, Ryan; Choi, Hyeonho; Kwon, Ohyun; Vardeny, Z. Valy

doi:10.1002/aelm.201500248

Magnetic Field Enhancement of Organic Light‐Emitting Diodes Based on Electron Donor–Acceptor Exciplex

Journal Article · Mon Nov 16 23:00:00 EST 2015 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201500248· OSTI ID:2279220

Basel, Tek ^[1]; Sun, Dali ^[1]; Baniya, Sangita ^[1]; McLaughlin, Ryan ^[1]; Choi, Hyeonho ^[2]; Kwon, Ohyun ^[2]; Vardeny, Z. Valy ^[1]

Department of Physics and Astronomy University of Utah Salt Lake City UT 84112 USA
Samsung Advanced Institute of Technology Samsung Electronics, Co., Ltd. 130 Samsung‐ro, Yeongtong‐gu Suwon‐si Gyeonggi‐do 443‐803 Korea

Reverse intersystem crossing (RISC) from triplet to singlet states has been recently introduced to photophysics of organic chromophores. One type of RISC occurs in donor (D)–acceptor (A) composites that form an exciplex manifold in which the energy difference, Δ E _ST between the lowest singlet (S ₁ ) and triplet (T ₁ ) levels of the exciplex is small (<100 meV) thus allowing RISC at room temperature. This adds a delayed component to the photoluminescence emission that is widely known as thermally activated delayed fluorescence. Here, it is found that the electroluminescence in organic light‐emitting diodes (OLED) based on electron D–A exciplex is significantly enhanced (up to ≈40%) by applying magnetic field, due to the existence of an additional spin‐mixing channel between singlet and triplet states in the exciplex. The large magneto‐electroluminescence (MEL) in N , N , N ′, N ′‐tetrakis(4‐methoxyphenyl)benzidine: tris‐[3‐(3‐pyridyl)mesityl]borane [D–A] based OLEDs is demonstrated. These results are supported by magneto‐photoluminescence (MPL) measurements, and density functional theory calculations. Importantly, it is found that both MEL and MPL are thermally activated indicating the dominant role of the RISC process. The MEL( B ) response using the Δ g mechanism is analyzed, where the electron and hole g ‐values are different from each other because they reside in different molecules.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; FG02-04ER46109

OSTI ID:: 2279220

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 2 Vol. 2; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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