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In situ observation of medium range ordering and crystallization of amorphous TiO2 ultrathin films grown by atomic layer deposition

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/5.0130918· OSTI ID:2279193
The evolution of medium range ordering (MRO) and crystallization behavior of amorphous TiO2 films grown by atomic layer deposition (ALD) were studied using in situ four-dimensional scanning transmission electron microscopy. The films remain fully amorphous when grown at 120 °C or below, but they start showing crystallization of anatase phases when grown at 140 °C or above. The degree of MRO increases as a function of temperature and maximizes at 140 °C when crystallization starts to occur, which suggests that crystallization prerequires the development of nanoscale MRO that serves as the site of nucleation. In situ annealing of amorphous TiO2 films grown at 80 °C shows enhancement of MRO but limited number of nucleation, which suggests that post-annealing develops only a small portion of MRO into crystal nuclei. The MRO regions that do not develop into crystals undergo structural relaxation instead, which provides insights into the critical size and degree of ordering and the stability of certain MRO types at different temperatures. In addition, crystallographic defects were observed within crystal phases, which likely negate corrosion resistance of the film. Our result highlights the importance of understanding and controlling MRO for optimizing ALD-grown amorphous films for next-generation functional devices and renewable energy applications.
Research Organization:
University of Wisconsin, Madison, WI (United States); University of Wisconsin-Madison, WI (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0020283
OSTI ID:
2279193
Alternate ID(s):
OSTI ID: 2454975
OSTI ID: 1907485
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 1 Vol. 11; ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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