Synthesis of Zirconium Diboride Films and ZrB{sub 2}/BC{sub x}N{sub y} Heterostructures

Journal Article · Thu Feb 15 00:00:00 EST 2018 · Inorganic Materials

DOI:https://doi.org/10.1134/S0020168518020152· OSTI ID:22788210

Shestakov, V. A.; Rumyantsev, Yu. M.; Kosinova, M. L. ^[1]

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1. Russian Academy of Sciences, Nikolaev Institute of Inorganic Chemistry, Siberian Branch (Russian Federation)

Using mechanochemical synthesis, we have prepared zirconium borohydride, Zr(BH{sub 4}){sub 4}, as a precursor for ZrB{sub 2} film growth by chemical vapor deposition. We have carried out the thermodynamic modeling of phase formation processes in the Zr–B–(N)–H and Zr–B–(N)–H–O systems in a wide temperature range, from 100 to 2500°C, at various p{sub (H2)}/p{sub (Zr(BH4)4)} and p{sub (NH3)}/p{sub (Zr(BH4)4)} partial pressure ratios in the starting gas mixtures. A process has been proposed for the growth of zirconium diboride films by Zr(BH{sub 4}){sub 4} decomposition using two techniques: chemical vapor deposition and plasma-enhanced chemical vapor deposition. We also developed a process for the growth of multilayer ZrB{sub 2}-and BC{sub x}N{sub y}-based structures.

• OSTI ID: 22788210
• Journal Information: Inorganic Materials, Vol. 54, Issue 2; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0020-1685
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOROHYDRIDES
CARBONITRIDES
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
LAYERS
PARTIAL PRESSURE
PLASMA
PRECURSOR
SYNTHESIS
TEMPERATURE RANGE
THERMODYNAMIC MODEL
THIN FILMS
ZIRCONIUM BORIDES