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Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy

Journal Article · · Technical Physics Letters
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Data on the molecular beam epitaxy (MBE) technology, design, and luminescent properties of heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots on InAs(001) substrates are presented. X-ray diffraction has been used to study short-period ZnTe/MgTe/MgSe superlattices used as wide-bandgap barriers in structures with CdTe/ZnTe quantum dots for the effective confinement of holes. It is shown that the design of these superlattices must take into account the replacement of Te atoms by selenium on MgSe/ZnTe and MgTe/MgSe heterointerfaces. Heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots exhibit photoluminescence at temperatures up to 300 K. The spectra of microphotoluminescence at T = 10 K display a set of emission lines from separate CdTe/ZnTe quantum dots, the surface density of which is estimated at ~10{sup 10} cm{sup −2}.
OSTI ID:
22786512
Journal Information:
Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 3 Vol. 44; ISSN 1063-7850
Country of Publication:
United States
Language:
English