X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter
Journal Article
·
· Technical Physics Letters
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.
- OSTI ID:
- 22786374
- Journal Information:
- Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 7 Vol. 44; ISSN 1063-7850
- Country of Publication:
- United States
- Language:
- English
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