Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH{sub 3}NH{sub 3}PbBr{sub 3} films

Journal Article · Fri Dec 15 04:00:00 EST 2017 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783417120034· OSTI ID:22771655

Shcherbakov, I. P.; Trapeznikova, I. N.; Petrov, V. N. ^[1]

---

1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)

Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH{sub 3}NH{sub 3}PbBr{sub 3}, were obtained and their electrical properties were studied. FETs made of CH{sub 3}NH{sub 3}PbBr{sub 3} films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH{sub 3}NH{sub 3}PbBr{sub 3} have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH{sub 3}NH{sub 3}PbBr{sub 3} at 300 K in saturation and weak field regimes were ~5 and ~2 cm{sup 2}/V s, respectively, whereas electron mobility is ~3 cm{sup 2}/V s, which exceeds the mobility value ~1 cm{sup 2}/V s obtained earlier for FETs based on CH{sub 3}NH{sub 3}PbI{sub 3}.

• OSTI ID: 22771655
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 12 Vol. 59; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BROMINE COMPOUNDS
CHARGE CARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
FILMS
HOLE MOBILITY
HOLES
HYSTERESIS
IODINE COMPOUNDS
LEAD COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PEROVSKITES
SATURATION