Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

Journal Article · Thu Mar 15 00:00:00 EDT 2018 · Physics of the Solid State

DOI:https://doi.org/10.1134/S106378341803006X· OSTI ID:22771386

Grabov, V. M.; Komarov, V. A.; Kablukova, N. S.; Krushel’nitskii, A. N. ^[1]

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1. Herzen State Pedagogical University (Russian Federation)

The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.

• OSTI ID: 22771386
• Journal Information: Physics of the Solid State, Vol. 60, Issue 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH
CARRIER DENSITY
FILMS
GALVANOMAGNETIC EFFECT
MAGNETIC FIELDS
MAGNETORESISTANCE
STRAINS
SUBSTRATES
SURFACES
THERMAL EXPANSION