Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

Journal Article · Thu Mar 15 04:00:00 EDT 2018 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783418030022· OSTI ID:22771379

Antipov, V. V.; Osipov, A. V. ^[1]; Rubets, V. P. ^[2]

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1. Russian Academy of Sciences, Institute of Problems of Mechanical Engineering (Russian Federation)
2. St. Petersburg State Institute of Technology (Technical University) (Russian Federation)

An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe{sub 2}, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.

• OSTI ID: 22771379
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 3 Vol. 60; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUFFERS
CADMIUM
CADMIUM SELENIDES
CRYSTAL GROWTH
ELECTRON DIFFRACTION
EPITAXY
EVAPORATION
EVAPORATORS
FILMS
LAYERS
POLYCRYSTALS
POWDERS
RAMAN SPECTRA
SELENIUM
SILICON
SILICON CARBIDES
SUBSTRATES
SURFACES