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Title: Phase Formation and Electronic Structure Peculiarities in the Al{sub 1–} {sub x}Si{sub x} Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering

Abstract

The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al{sub 0.75}Si{sub 0.25} composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al{sub 3}Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al{sub 3}Si of the Pm3m cubic system with the primitive cell parameter a = 4.085 Å. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm{sup 2} gives rise to the partial decomposition of the Al{sub 3}Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Voronezh State University (Russian Federation)
Publication Date:
OSTI Identifier:
22771101
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ALUMINIUM SILICIDES; ANNEALING; CUBIC LATTICES; ELECTRONIC STRUCTURE; FILMS; ION BEAMS; MAGNETRONS; NANOSTRUCTURES; PHOTONS; POLYCRYSTALS; PULSES; SILICON COMPOUNDS; SOLID SOLUTIONS; SPUTTERING; SUBSTRATES; X-RAY DIFFRACTION; X-RAY EMISSION SPECTROSCOPY

Citation Formats

Terekhov, V. A., E-mail: ftt@phys.vsu.ru, Usol’tseva, D. S., Serbin, O. V., Zanin, I. E., Kulikova, T. V., Nesterov, D. N., Barkov, K. A., Sitnikov, A. V., Lazaruk, S. K., and Domashevskaya, E. P. Phase Formation and Electronic Structure Peculiarities in the Al{sub 1–} {sub x}Si{sub x} Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering. United States: N. p., 2018. Web. doi:10.1134/S1063783418050311.
Terekhov, V. A., E-mail: ftt@phys.vsu.ru, Usol’tseva, D. S., Serbin, O. V., Zanin, I. E., Kulikova, T. V., Nesterov, D. N., Barkov, K. A., Sitnikov, A. V., Lazaruk, S. K., & Domashevskaya, E. P. Phase Formation and Electronic Structure Peculiarities in the Al{sub 1–} {sub x}Si{sub x} Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering. United States. doi:10.1134/S1063783418050311.
Terekhov, V. A., E-mail: ftt@phys.vsu.ru, Usol’tseva, D. S., Serbin, O. V., Zanin, I. E., Kulikova, T. V., Nesterov, D. N., Barkov, K. A., Sitnikov, A. V., Lazaruk, S. K., and Domashevskaya, E. P. Tue . "Phase Formation and Electronic Structure Peculiarities in the Al{sub 1–} {sub x}Si{sub x} Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering". United States. doi:10.1134/S1063783418050311.
@article{osti_22771101,
title = {Phase Formation and Electronic Structure Peculiarities in the Al{sub 1–} {sub x}Si{sub x} Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering},
author = {Terekhov, V. A., E-mail: ftt@phys.vsu.ru and Usol’tseva, D. S. and Serbin, O. V. and Zanin, I. E. and Kulikova, T. V. and Nesterov, D. N. and Barkov, K. A. and Sitnikov, A. V. and Lazaruk, S. K. and Domashevskaya, E. P.},
abstractNote = {The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al{sub 0.75}Si{sub 0.25} composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al{sub 3}Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al{sub 3}Si of the Pm3m cubic system with the primitive cell parameter a = 4.085 Å. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm{sup 2} gives rise to the partial decomposition of the Al{sub 3}Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.},
doi = {10.1134/S1063783418050311},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 5,
volume = 60,
place = {United States},
year = {2018},
month = {5}
}