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Title: Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface

Abstract

The unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of the type of CH{sub 3}–phenylene–thiophene–thiophene–phenylene–CH{sub 3} (CH{sub 3}–PTTP–CH{sub 3}) on an oxidized silicon surface have been studied. The electronic characteristics have been measured in the energy range from 5 to 20 eV above the Fermi level using total current spectroscopy (TCS). The structure of the CH{sub 3}–PTTP–CH{sub 3} film surfaces has been studied by atomic force microscopy (AFM), and the atomic compositions of the films have been studied by X-ray photoelectron spectroscopy (XPS). The changes in the maximum intensities measured by the TCS method obtained from the deposited CH{sub 3}–PTTP–CH{sub 3} film and from the substrate during increasing in the organic coating thickness to 6 nm is discussed. The formation of the boundary potential barrier in the n-Si/SiO{sub 2}/CH{sub 3}–PTTP–CH{sub 3} is accompanied by the decrease in the surface work function from 4.2 ± 0.1 to 4.0 ± 0.1 eV as the organic coating thickness increases to 3 nm. The ratio of atomic concentrations C: S in the CH{sub 3}–PTTP–CH{sub 3} films well corresponds to the chemical formula of CH{sub 3}–PTTP–CH{sub 3} molecules. The roughness of the CH{sub 3}–PTTP–CH{sub 3} coatingmore » surface was not higher than 10 nm on the ~10 × 10 μm areas as the total CH{sub 3}–PTTP–CH{sub 3}-layer thickness was about 100 nm.« less

Authors:
; ; ; ;  [1];  [2]; ;  [3];  [4]
  1. St. Petersburg State University (Russian Federation)
  2. Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, Institute of Molecules and Crystals (Russian Federation)
  3. Russian Academy of Sciences, Enikopolov Institute of Synthetic Polymeric Materials (Russian Federation)
  4. AGH University of Science and Technology, Faculty of Material Science and Ceramics (Poland)
Publication Date:
OSTI Identifier:
22771100
Resource Type:
Journal Article
Journal Name:
Physics of the Solid State
Additional Journal Information:
Journal Volume: 60; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7834
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; COATINGS; CONCENTRATION RATIO; FERMI LEVEL; INTERFACES; LAYERS; MOLECULES; POLYCYCLIC SULFUR HETEROCYCLES; ROUGHNESS; SILICON; SILICON OXIDES; SUBSTRATES; SURFACE COATING; SURFACES; THICKNESS; THIN FILMS; THIOPHENE; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Komolov, A. S., E-mail: a.komolov@spbu.ru, Lazneva, E. F., Gerasimova, N. B., Panina, Yu. A., Zashikhin, G. D., Pshenichnyuk, S. A., Borshchev, O. V., Ponomarenko, S. A., and Handke, B. Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface. United States: N. p., 2018. Web. doi:10.1134/S1063783418050128.
Komolov, A. S., E-mail: a.komolov@spbu.ru, Lazneva, E. F., Gerasimova, N. B., Panina, Yu. A., Zashikhin, G. D., Pshenichnyuk, S. A., Borshchev, O. V., Ponomarenko, S. A., & Handke, B. Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface. United States. doi:10.1134/S1063783418050128.
Komolov, A. S., E-mail: a.komolov@spbu.ru, Lazneva, E. F., Gerasimova, N. B., Panina, Yu. A., Zashikhin, G. D., Pshenichnyuk, S. A., Borshchev, O. V., Ponomarenko, S. A., and Handke, B. Tue . "Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface". United States. doi:10.1134/S1063783418050128.
@article{osti_22771100,
title = {Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface},
author = {Komolov, A. S., E-mail: a.komolov@spbu.ru and Lazneva, E. F. and Gerasimova, N. B. and Panina, Yu. A. and Zashikhin, G. D. and Pshenichnyuk, S. A. and Borshchev, O. V. and Ponomarenko, S. A. and Handke, B.},
abstractNote = {The unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of the type of CH{sub 3}–phenylene–thiophene–thiophene–phenylene–CH{sub 3} (CH{sub 3}–PTTP–CH{sub 3}) on an oxidized silicon surface have been studied. The electronic characteristics have been measured in the energy range from 5 to 20 eV above the Fermi level using total current spectroscopy (TCS). The structure of the CH{sub 3}–PTTP–CH{sub 3} film surfaces has been studied by atomic force microscopy (AFM), and the atomic compositions of the films have been studied by X-ray photoelectron spectroscopy (XPS). The changes in the maximum intensities measured by the TCS method obtained from the deposited CH{sub 3}–PTTP–CH{sub 3} film and from the substrate during increasing in the organic coating thickness to 6 nm is discussed. The formation of the boundary potential barrier in the n-Si/SiO{sub 2}/CH{sub 3}–PTTP–CH{sub 3} is accompanied by the decrease in the surface work function from 4.2 ± 0.1 to 4.0 ± 0.1 eV as the organic coating thickness increases to 3 nm. The ratio of atomic concentrations C: S in the CH{sub 3}–PTTP–CH{sub 3} films well corresponds to the chemical formula of CH{sub 3}–PTTP–CH{sub 3} molecules. The roughness of the CH{sub 3}–PTTP–CH{sub 3} coating surface was not higher than 10 nm on the ~10 × 10 μm areas as the total CH{sub 3}–PTTP–CH{sub 3}-layer thickness was about 100 nm.},
doi = {10.1134/S1063783418050128},
journal = {Physics of the Solid State},
issn = {1063-7834},
number = 5,
volume = 60,
place = {United States},
year = {2018},
month = {5}
}