Initial Stages of Growth of Barium Zirconate Titanate and Barium Stannate Titanate Films on Single-Crystal Sapphire and Silicon Carbide

Journal Article · Mon Oct 15 04:00:00 EDT 2018 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783418100293· OSTI ID:22770978

Zlygostov, M. V. ^[1]; Serenkov, I. T.; Sakharov, V. I.; Afrosimov, V. V. ^[2]; Odinets, A. A. ^[1]

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1. St. Petersburg Electrotechnical University “LETI,” (Russian Federation)
2. Russian Academy of Sciences, Ioffe Institute (Russian Federation)

The initial stages of growth of barium zirconate titanate and barium stannate titanate ferroelectric films on single-crystal sapphire and silicon carbide are studied for the first time. The choice of substrates is dictated by the possibility of using such structures in ultra-high frequency devices. The growth of discontinuous BaZr{sub x}Ti{sub 1–x}O{sub 3} films is found to be mediated by the gas phase mass transport mechanism in the studied temperature range. For deposition of BaSn{sub x}Ti{sub 1–x}O{sub 3} films, the mechanism of mass transport switches at ~800°C from surface diffusion to gas phase diffusion; also, the films deposited on sapphire and silicon carbide have considerably different elemental composition. The formation of an intermediate SiO{sub 2} layer is noted on silicon carbide during the growth of oxide films on this substrate, its thickness depending on the deposition temperature.

• OSTI ID: 22770978
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 10 Vol. 60; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM COMPOUNDS
CRYSTAL GROWTH
DEPOSITION
DIFFUSION
FERROELECTRIC MATERIALS
FILMS
LAYERS
MASS
MONOCRYSTALS
SAPPHIRE
SILICA
SILICON CARBIDES
SILICON OXIDES
STANNATES
SUBSTRATES
SURFACES
THICKNESS
TITANATES
ZIRCONATES