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Title: Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

Abstract

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Authors:
 [1]
  1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)
Publication Date:
OSTI Identifier:
22760211
Resource Type:
Journal Article
Journal Name:
Physics of Atomic Nuclei
Additional Journal Information:
Journal Volume: 80; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7788
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMPLITUDES; CARRIER MOBILITY; DENSITY; ELECTRIC POTENTIAL; ELECTRON TRANSFER; ELECTRONS; ENERGY RESOLUTION; FANO FACTOR; GAIN; NOISE; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SERIES EXPANSION; SIGNALS

Citation Formats

Samedov, V. V., E-mail: v-samedov@yandex.ru. Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage. United States: N. p., 2017. Web. doi:10.1134/S1063778817090149.
Samedov, V. V., E-mail: v-samedov@yandex.ru. Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage. United States. https://doi.org/10.1134/S1063778817090149
Samedov, V. V., E-mail: v-samedov@yandex.ru. Fri . "Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage". United States. https://doi.org/10.1134/S1063778817090149.
@article{osti_22760211,
title = {Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage},
author = {Samedov, V. V., E-mail: v-samedov@yandex.ru},
abstractNote = {It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.},
doi = {10.1134/S1063778817090149},
url = {https://www.osti.gov/biblio/22760211}, journal = {Physics of Atomic Nuclei},
issn = {1063-7788},
number = 11,
volume = 80,
place = {United States},
year = {2017},
month = {12}
}