Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

Journal Article · Fri Dec 15 00:00:00 EST 2017 · Physics of Atomic Nuclei

DOI:https://doi.org/10.1134/S1063778817090149· OSTI ID:22760211

Samedov, V. V., E-mail: [e-mail] ^[1]

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1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

• OSTI ID: 22760211
• Journal Information: Physics of Atomic Nuclei, Vol. 80, Issue 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7788
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMPLITUDES
CARRIER MOBILITY
DENSITY
ELECTRIC POTENTIAL
ELECTRON TRANSFER
ELECTRONS
ENERGY RESOLUTION
FANO FACTOR
GAIN
NOISE
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
SERIES EXPANSION
SIGNALS