Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

doi:https://doi.org/10.1134/S1063778817090149

Title: Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

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Abstract

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Authors:

Samedov, V. V., E-mail: v-samedov@yandex.ru ^[1]

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

Publication Date:: 2017-12-15

OSTI Identifier:: 22760211

Resource Type:: Journal Article

Journal Name:: Physics of Atomic Nuclei

Additional Journal Information:: Journal Volume: 80; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7788

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMPLITUDES; CARRIER MOBILITY; DENSITY; ELECTRIC POTENTIAL; ELECTRON TRANSFER; ELECTRONS; ENERGY RESOLUTION; FANO FACTOR; GAIN; NOISE; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SERIES EXPANSION; SIGNALS

Citation Formats


                    Samedov, V. V., E-mail: v-samedov@yandex.ru. Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage.  United States: N. p., 2017. 
        Web.  doi:10.1134/S1063778817090149.

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                    Samedov, V. V., E-mail: v-samedov@yandex.ru. Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage.  United States.  https://doi.org/10.1134/S1063778817090149

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                    Samedov, V. V., E-mail: v-samedov@yandex.ru. Fri .  
        "Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage".  United States.  https://doi.org/10.1134/S1063778817090149.

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@article{osti_22760211,

  title        = {Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage},

  author       = {Samedov, V. V., E-mail: v-samedov@yandex.ru},

  abstractNote = {It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.},

  doi          = {10.1134/S1063778817090149},

  url          = {https://www.osti.gov/biblio/22760211},
  journal      = {Physics of Atomic Nuclei},

  issn         = {1063-7788},

  number       = 11,

  volume       = 80,

  place        = {United States},

  year         = {2017},

  month        = {12}

}

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