Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

Journal Article · Thu Jun 15 00:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617060240· OSTI ID:22756501

Kamilov, T. S.; Ibragimova, B. V. ^[1]; Ivakin, G. I.; Klechkovskaya, V. V. ^[2]

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1. Tashkent State Technical University named after Abu Raykhan Biruni (Uzbekistan)
2. Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics” (Russian Federation)

The structural features of higher manganese-silicide films obtained by the diffusion doping of single-crystal silicon substrates with manganese vapor in a sealed cell and a flow-through quartz reactor with continuous pumping are comparatively analyzed. Scanning electron microscopy and high-resolution transmission electron microscopy show that a single-phase textured film of higher manganese silicide is formed in the evacuated cell. A change in the growth conditions from steady (cell) to quasi-steady-state (reactor) leads to the formation of polycrystalline islands of higher manganese silicide with nanoscale inclusions of the manganese- monosilicide phase.

• OSTI ID: 22756501
• Journal Information: Semiconductors, Vol. 51, Issue 6; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DOPED MATERIALS
FILMS
MANGANESE SILICIDES
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SILICON
TRANSMISSION ELECTRON MICROSCOPY