n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films
- National Technical University “Kharkiv Polytechnic Institute” (Ukraine)
- National Aerospace University “Kharkiv Aviation Institute” (Ukraine)
A p-CuI/n-ZnO barrier structure is investigated as a promising base diode structure for a semitransparent near-ultraviolet detector. We analyze the crystal structure and electrical and optical properties of zinc-oxide nanoarrays electrodeposited in the pulsed mode and copper-iodide films formed by the successive ionic layer adsorption and reaction (SILAR) method, which were used as the basis for an n-ZnO/p-CuI barrier heterostructure sensitive to ultraviolet radiation in the spectral range of 365–370 nm. Using the I–V characteristics, a shunting resistance of R{sub sh} · S{sub c} = 879 Ω cm{sup 2}, a series resistance of R{sub s} · S{sub c} = 8.5 Ω cm{sup 2}, a diode rectification factor of K = 17.6, a rectifying p–n-junction barrier height of Φ = 1.1 eV, and a diode ideality factor of η = 2.4 are established. It is demonstrated that at low forward biases (0 V < {sup U} < 0.15 V), the effects of charge-carrier recombination and tunneling are equal. As the bias increases above 0.15 V, the tunneling–recombination transport mechanism starts working. The diode saturation current J{sub 0} is found to be 6.4 × 10{sup –6} mA cm{sup –2} for recombination and tunneling charge-carrier transport and 2.7 × 10{sup –3} mA cm{sup –2} for tunneling–recombination charge-carrier transport.
- OSTI ID:
- 22756491
- Journal Information:
- Semiconductors, Vol. 51, Issue 6; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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