On the conduction-band structure of bismuth telluride: optical absorption data
- Peter the Great St. Petersburg Polytechnic University (Russian Federation)
- Russian Academy of Sciences, Ioffe Institute (Russian Federation)
The optical absorption spectra of n-Bi{sub 2}Te{sub 3} in the range 40–300 meV are studied at room temperature in relation to the electron concentration and sample thickness in order to determine the parameters of the additional subband in the conduction band of Bi{sub 2}Te{sub 3} and to clarify the possible effect of this subband on charge-carrier transport. It is shown that bismuth telluride is a direct-gap semiconductor with an additional subband in the conduction band. These data are consistent with the results of studies of quantum oscillations in n-Bi{sub 2}Te{sub 3} in high magnetic fields at temperatures below 20 K.
- OSTI ID:
- 22756468
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 51; ISSN 1063-7826; ISSN SMICES
- Country of Publication:
- United States
- Language:
- English
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