Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

Journal Article · Wed Nov 15 00:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617110185· OSTI ID:22756260

Belyakov, V. A.; Vasil’ev, A. P. ^[1]; Bobrov, M. A.; Blokhin, S. A.; Kulagina, M. M. ^[2]; Kuzmenkov, A. G. ^[3]; Nevedomskii, V. N.; Guseva, Yu. A.; Maleev, S. N. ^[2]; Ladenkov, I. V.; Fefelova, E. L.; Fefelov, A. G. ^[1]; Ustinov, V. M. ^[3]

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1. JSC “Salyut” (Russian Federation)
2. Ioffe Institute (Russian Federation)
3. Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)

The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.

• OSTI ID: 22756260
• Journal Information: Semiconductors, Vol. 51, Issue 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
CURRENT DENSITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LATTICE PARAMETERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
THICKNESS
VARIABLE CAPACITANCE DIODES