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Title: Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

Abstract

The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.

Authors:
 [1]; ;  [2]; ; ;  [1];  [3]; ; ;  [1]; ; ;  [2];  [3]
  1. Ioffe Institute (Russian Federation)
  2. JSC “Salyut” (Russian Federation)
  3. Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)
Publication Date:
OSTI Identifier:
22756260
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; CURRENT DENSITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LATTICE PARAMETERS; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; THICKNESS; VARIABLE CAPACITANCE DIODES

Citation Formats

Maleev, N. A., E-mail: maleev@beam.ioffe.ru, Belyakov, V. A., Vasil’ev, A. P., Bobrov, M. A., Blokhin, S. A., Kulagina, M. M., Kuzmenkov, A. G., Nevedomskii, V. N., Guseva, Yu. A., Maleev, S. N., Ladenkov, I. V., Fefelova, E. L., Fefelov, A. G., and Ustinov, V. M. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors. United States: N. p., 2017. Web. doi:10.1134/S1063782617110185.
Maleev, N. A., E-mail: maleev@beam.ioffe.ru, Belyakov, V. A., Vasil’ev, A. P., Bobrov, M. A., Blokhin, S. A., Kulagina, M. M., Kuzmenkov, A. G., Nevedomskii, V. N., Guseva, Yu. A., Maleev, S. N., Ladenkov, I. V., Fefelova, E. L., Fefelov, A. G., & Ustinov, V. M. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors. United States. doi:10.1134/S1063782617110185.
Maleev, N. A., E-mail: maleev@beam.ioffe.ru, Belyakov, V. A., Vasil’ev, A. P., Bobrov, M. A., Blokhin, S. A., Kulagina, M. M., Kuzmenkov, A. G., Nevedomskii, V. N., Guseva, Yu. A., Maleev, S. N., Ladenkov, I. V., Fefelova, E. L., Fefelov, A. G., and Ustinov, V. M. Wed . "Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors". United States. doi:10.1134/S1063782617110185.
@article{osti_22756260,
title = {Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors},
author = {Maleev, N. A., E-mail: maleev@beam.ioffe.ru and Belyakov, V. A. and Vasil’ev, A. P. and Bobrov, M. A. and Blokhin, S. A. and Kulagina, M. M. and Kuzmenkov, A. G. and Nevedomskii, V. N. and Guseva, Yu. A. and Maleev, S. N. and Ladenkov, I. V. and Fefelova, E. L. and Fefelov, A. G. and Ustinov, V. M.},
abstractNote = {The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.},
doi = {10.1134/S1063782617110185},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 51,
place = {United States},
year = {2017},
month = {11}
}