On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
The times of the cascade capture of electrons at a donor–acceptor charged dipole for the case of the pulsed and steady-state excitation of impurity photoconductivity in GaAs, Ge, and Si are calculated. It is shown that the dependence of the frequency of the cascade capture on the concentration of the charged impurity becomes sublinear in semiconductors under consideration at a concentration of the charged impurity higher than 10{sup 13} cm{sup –3}.
- OSTI ID:
- 22756258
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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