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Title: A comparative study on the electronic and optical properties of Sb{sub 2}Se{sub 3} thin film

Journal Article · · Semiconductors
 [1]
  1. City University of Hong Kong, Department of Physics and Materials Science (China)

The thin film of Sb{sub 2}Se{sub 3} was deposited by thermal evaporation method and the film was annealed in N{sub 2} flow in a three zone furnace at a temperature of 290°С for 30 min. The structural properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (ТЕМ), X-ray diffraction (XRD) and Raman spectroscopy, respectively. It is seen that the as-deposited film is amorphous and the annealed film is polycrystalline in nature. The surface of Sb{sub 2}Se{sub 3} film is oxidized with a thickness of 1.15 nm investigated by X-ray photolecetron spectroscopy (XPS) measurement. Spectroscopic ellipsometry (SE) and UV–vis spectroscopy measurements were carried out to study the optical properties of Sb{sub 2}Se{sub 3} film. In addition, the first principles calculations were applied to study the electronic and optical properties of Sb{sub 2}Se{sub 3}. From the theoretical calculation it is seen that Sb{sub 2}Se{sub 3} is intrinsically an indirect band gap semiconductor. Importantly, the experimental band gap is in good agreement with the theoretical band gap. Furthermore, the experimental values of n, k, ε{sub 1}, and ε{sub 2} are much closer to the theoretical results. However, the obtained large dielectric constants and refractive index values suggest that exciton binding energy in Sb{sub 2}Se{sub 3} should be relatively small and an antireflective coating is recommended to enhance the light absorption of Sb{sub 2}Se{sub 3} for thin film solar cells application.

OSTI ID:
22756231
Journal Information:
Semiconductors, Vol. 51, Issue 12; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English