Luminescence Properties of Cd{sub x}Zn{sub 1–} {sub x}O Thin Films
- Russian Academy of Sciences, Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics” (Russian Federation)
Thin Cd{sub x}Zn{sub 1–} {sub x}O films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured Cd{sub x}Zn{sub 1–} {sub x}O thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd{sub 0.15}Zn{sub 0.85}O and Cd{sub 0.3}Zn{sub 0.7}O films. An unsteady (S-like) temperature dependence of the spectral position of the exciton photoluminescence peak in Cd{sub x}Zn{sub 1–} {sub x}O films is observed. Such a dependence is associated with the effect of the localization of charge carriers.
- OSTI ID:
- 22756198
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 52; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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