Red Single-Photon Emission from InAs/AlGaAs Quantum Dots

Journal Article · Sun Apr 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618040243· OSTI ID:22749995

Belyaev, K. G.; Klimko, G. V. ^[1]; Mukhin, I. S. ^[2]; Ivanov, S. V.; Toropov, A. A. ^[1]

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1. Ioffe Institute (Russian Federation)
2. St. Petersburg Academic University Russian Academy of Science (Russian Federation)

We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 μm, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence (μ-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of g{sup (2)}(0) ~ 0.17 that is a clear evidence of non-classical light.

• OSTI ID: 22749995
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
TIME DELAY
VISIBLE SPECTRA