Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers

Journal Article · Fri Jun 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618060039· OSTI ID:22749926

Babichev, A. V. ^[1]; Kurochkin, A. S.; Kolodeznyi, E. C. ^[2]; Filimonov, A. V. ^[1]; Usikova, A. A.; Nevedomsky, V. N. ^[3]; Gladyshev, A. G.; Karachinsky, L. Ya.; Novikov, I. I. ^[1]

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1. Connector Optics LLC (Russian Federation)
2. ITMO University (Russian Federation)
3. Ioffe Institute (Russian Federation)

The results of development of the basic structure and technological conditions of growing heterostructures for single- and dual-frequency quantum-cascade lasers are reported. The heterostructure for a dual-frequency quantum-cascade laser includes cascades emitting at wavelengths of 9.6 and 7.6 μm. On the basis of the suggested heterostructure, it is possible to develop a quantum-cascade laser operating at a difference frequency of 8 THz. The heterostructures for the quantum-cascade laser are grown using molecularbeam epitaxy. The methods of X-ray diffraction and emission electron microscopy are used to study the structural properties of the fabricated heterostructures. Good agreement between the specified and realized thicknesses of the epitaxial layers and a high uniformity of the chemical composition and thicknesses of the epitaxial layers over the area of the heterostructure is demonstrated. A stripe-structured quantum-cascade laser is fabricated; its generation at a wavelength of 9.6 μm is demonstrated.

• OSTI ID: 22749926
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 52; ISSN 1063-7826; ISSN SMICES
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
ELECTRON EMISSION
ELECTRON MICROSCOPY
EPITAXY
LASERS
X-RAY DIFFRACTION