In{sub 0.8}Ga{sub 0.2}As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties
- Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)
- Ioffe Institute (Russian Federation)
The growth peculiarities of In{sub 0.8}Ga{sub 0.2}As quantum dots and their arrays on GaAs surface by metalorganic vapor-phase epitaxy are investigated. The bimodal size distribution of In{sub 0.8}Ga{sub 0.2}As quantum dots is established from the photoluminescence spectra recorded at different temperatures. The growth parameters were determined at which the stacking of 20 In{sub 0.8}Ga{sub 0.2}As quantum-dot layers in the active area of a GaAs solar cell makes it possible to enhance the photogenerated current by 0.97 and 0.77 mA/cm{sup 2} for space and terrestrial solar spectra, respectively, with the high quality of the p–n junction retained. The photogenerated current in a solar cell with quantum dots is higher than in the reference GaAs structure by ~1% with regard to nonradiative-recombination loss originating from stresses induced by the quantum-dot array.
- OSTI ID:
- 22749885
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 52; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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