On Recombination Processes in CdS–PbS Films
- Saratov State University (Russian Federation)
The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS){sub 0.9}–(PbS){sub 0.1} films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.
- OSTI ID:
- 22749847
- Journal Information:
- Semiconductors, Vol. 52, Issue 8; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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