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Title: On Recombination Processes in CdS–PbS Films

Abstract

The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS){sub 0.9}–(PbS){sub 0.1} films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.

Authors:
; ;  [1]
  1. Saratov State University (Russian Federation)
Publication Date:
OSTI Identifier:
22749847
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 8; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SULFIDES; CHARGE CARRIERS; FILMS; LEAD SULFIDES; RECOMBINATION; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Rokakh, A. G., Shishkin, M. I., E-mail: shishkin1mikhail@gmail.com, and Atkin, V. S. On Recombination Processes in CdS–PbS Films. United States: N. p., 2018. Web. doi:10.1134/S1063782618080171.
Rokakh, A. G., Shishkin, M. I., E-mail: shishkin1mikhail@gmail.com, & Atkin, V. S. On Recombination Processes in CdS–PbS Films. United States. doi:10.1134/S1063782618080171.
Rokakh, A. G., Shishkin, M. I., E-mail: shishkin1mikhail@gmail.com, and Atkin, V. S. Wed . "On Recombination Processes in CdS–PbS Films". United States. doi:10.1134/S1063782618080171.
@article{osti_22749847,
title = {On Recombination Processes in CdS–PbS Films},
author = {Rokakh, A. G. and Shishkin, M. I., E-mail: shishkin1mikhail@gmail.com and Atkin, V. S.},
abstractNote = {The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS){sub 0.9}–(PbS){sub 0.1} films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is shown. The films are excited over the entire active surface and pointwise (within one crystallite). The surface recombination rate and the lifetime of majority charge carriers at different generation rates and characters of excitation are estimated. A comparative table of recombination parameters of CdS and CdS–PbS films is presented.},
doi = {10.1134/S1063782618080171},
journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 52,
place = {United States},
year = {2018},
month = {8}
}