Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
The continuous transfer of (001)Si layers 0.2–1.7 μm thick by implanted hydrogen to the c-sapphire surface during direct bonding at high temperatures of 300–500°C is demonstrated for the first time. The formation of an intermediate silicon-oxide layer SiO{sub x} during subsequent heat treatments at 800–1100°C, whose increase in thickness (up to 3 nm) correlates with an increase in the positive charge Q{sub i} at the heterointerface to ~1.5 × 10{sup 12} cm{sup –2} in contrast to the negative charge at the SiO{sub x}/Al{sub 2}O{sub 3} ALD heterointerface. During silicon-layer transfer to sapphire with a thermal silicon-dioxide layer, Q{sub i} decreases by more than an order of magnitude to 5 × 10{sup 10} cm{sup –2} with an increase in the SiO{sub 2} thickness from 50 to 400 nm, while the electron and hole mobilities barely differ from the values in bulk silicon. Based on these results, a qualitative model of the formation of positively charged oxygen vacancies in a 5-nm sapphire layer near the bonding interface is proposed.
- OSTI ID:
- 22749767
- Journal Information:
- Semiconductors, Vol. 52, Issue 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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