Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz
- Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (Russian Federation)
- Belarusian State University (Belarus)
- National Research Nuclear University MEPhI (Russian Federation)
- National Research University of Electronic Technology MIET (Russian Federation)
- AO Polyus Research Institute of M.F. Stelmakh (Russian Federation)
- Institute of Radio Engineering and Electronics, Russian Academy of Sciences (Russian Federation)
- Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
The active region of a THz (terahertz) quantum-cascade laser based on three tunnel-coupled GaAs/Al{sub 0.15}Ga{sub 0.85}As quantum wells with a resonance-phonon depopulation scheme is designed. Energy levels, matrix elements of dipole transitions, and gain spectra are calculated as functions of the applied electric-field strength F and temperature. It is shown that the maximum gain is implemented at a frequency of 3.37 THz and F = 12.3 kV/cm. Based on the proposed design, a quantum-cascade laser emitting at ~3.3 THz with a double metal waveguide and T{sub max} ~ 84 K is fabricated. The activation energy E{sub a} = 23 meV for longitudinal-optical (LO) phonon emission upon the stimulated recombination of hot electrons from the upper laser level to the lower one is determined from the Arrhenius temperature dependence of the output power.
- OSTI ID:
- 22749734
- Journal Information:
- Semiconductors, Vol. 52, Issue 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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