Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Journal Article · Sat Dec 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618120175· OSTI ID:22749711

Timoshnev, S. N.; Sobolev, M. S.; Nikitina, E. V.; Shubina, K. Yu.; Berezovskaia, T. N.; Shtrom, I. V.; Bouravleuv, A. D. ^[1]

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1. St. Petersburg National Research Academic University, Russian Academy of Sciences (Russian Federation)

The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented. It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy.

• OSTI ID: 22749711
• Journal Information: Semiconductors, Vol. 52, Issue 12; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K