Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Journal Article · Sat Dec 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618120102· OSTI ID:22749708

Arapov, Yu. G.; Ilchenko, E. I.; Neverov, V. N.; Savelyev, A. P.; Podgornykh, S. M.; Shelushinina, N. G.; Yakunin, M. V. ^[1]; Vasil’evskii, I. S.; Vinichenko, A. N. ^[2]

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1. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences (Russian Federation)
2. National Research Nuclear University “MEPhI” (Russian Federation)

The longitudinal ρ{sub xx} and Hall ρ{sub xy} resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n-In{sub 0.9}Ga{sub 0.1}As/In{sub 0.81}Al{sub 0.19}As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρ{sub xx} peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.

• OSTI ID: 22749708
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
HALL EFFECT
HIGH ROOMS
INDIUM ARSENIDES
MAGNETIC FIELDS
PEAKS
PHASE TRANSFORMATIONS
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS