Pulsed laser irradiation-assisted electrodeposition of germanium in ionic liquid: From amorphous film to polycrystalline branched structures
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Jilin University, Changchun 130012 (China)
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000 (China)
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001 (China)
Highlights: • Ge branched structures was prepared by electrodeposition in ([EMIm]Tf2N) ionic liquid with laser irradiation. • The crystallinity of Ge with laser irradiation is obviously improved compared to the Ge film without laser irradiation. • By controlling the deposition time, the nanostructures with different morphology and size are obtained. - Abstract: The effect of a pulsed laser on the electrodeposition of germanium on indium tin oxide glass in the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIm]Tf{sub 2}N) was investigated. Cyclic voltammetric analysis of GeCl{sub 4} in [EMIm]Tf{sub 2}N showed that laser irradiation produced a positive shift of the reduction potential and an increase in the reduction current. Laser irradiation influenced the morphology and crystallinity of the Ge deposits. A deposition time of 1200 s gave rise to amorphous Ge deposits when laser irradiation was not applied, whereas laser irradiation led to a polycrystalline branched structure. The length and width of the branched structures were about 9.58 and 2.18 μm, respectively, and the average grain size of the sample was ∼76 nm. The morphology and size of the Ge deposits could be controlled by adjusting the deposition time under laser irradiation. The mechanism of growth of the Ge deposits under laser irradiation was discussed in detail.
- OSTI ID:
- 22730389
- Journal Information:
- Materials Research Bulletin, Vol. 93; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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