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Lasing on the {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} transition of Er{sup 3+} ions in ZrO{sub 2} – Y{sub 2}O{sub 3} – Er{sub 2}O{sub 3} crystals under resonant diode pumping into the {sup 4}I{sub 13/2} level

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
DOI:https://doi.org/10.1070/QEL15933· OSTI ID:22724632
; ;  [1];  [2]
  1. N.P. Ogarev Mordovian State University, Saransk (Russian Federation)
  2. A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

Experimental results on lasing in ZrO{sub 2} – Y{sub 2}O{sub 3} – Er{sub 2}O{sub 3} crystals are presented. Under diode pumping of ZrO{sub 2} – Y{sub 2}O{sub 3} (13.8 mol %) – Er{sub 2}O{sub 3} (0.2 mol %) crystals into the {sup 4}I{sub 13/2} level of Er{sup 3+} ions, lasing is obtained at the {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} transition with a wavelength of 1648 nm. (lasers)

OSTI ID:
22724632
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 5 Vol. 46; ISSN 1063-7818
Country of Publication:
United States
Language:
English

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