Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
The forward current–voltage characteristics of mesa-epitaxial 4H-SiC Schottky diodes are measured in high electric fields (up to 4 × 10{sup 5} V/cm) in the n-type base region. A semi-empirical formula for the field dependence of the electron drift velocity in 4H-SiC along the hexagonal axis of the crystal is derived. It is shown that the saturated drift velocity is (1.55 ± 0.05) × 10{sup 7} cm/s in electric fields higher than 2 × 10{sup 5} V/cm.
- OSTI ID:
- 22649747
- Journal Information:
- Semiconductors, Vol. 50, Issue 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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