Room temperature de Haas–van Alphen effect in silicon nanosandwiches

Journal Article · Mon Aug 15 04:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616080273· OSTI ID:22649728

Grigoryev, V. Yu. ^[1]; Klyachkin, L. E.; Malyarenko, A. M. ^[2]; Mashkov, V. A.; Romanov, V. V. ^[1]

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1. Peter the Great St. Petersburg Polytechnic University (Russian Federation)
2. Ioffe Institute (Russian Federation)

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid also promotes the creation of composite bosons and fermions by the capture of single magnetic flux quanta at the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above, we present the first findings of the high temperature de Haas–van Alphen (300 K) and quantum Hall (77 K) effects in the silicon sandwich structure that represents the ultranarrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of p-type Si-QW because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron–electron interaction.

• OSTI ID: 22649728
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
BOSONS
DE HAAS-VAN ALPHEN EFFECT
DOPED MATERIALS
EFFECTIVE MASS
ELECTRON-ELECTRON COUPLING
ELECTRONS
HOLES
MAGNETIC FIELDS
MAGNETIC FLUX
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
QUANTUM WELLS
SILICON
SPIN