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Title: Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

Journal Article · · Semiconductors
; ; ;  [1]
  1. Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)

The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current and remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.

OSTI ID:
22649686
Journal Information:
Semiconductors, Vol. 50, Issue 10; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English