Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

Journal Article · Tue Nov 15 04:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616110270· OSTI ID:22649671

Kovalevsky, K. A.; Orlov, M. L.; Tsyplenkov, V. V. ^[1]; Hübers, H. -W. ^[2]; Dessmann, N. ^[3]; Kozlov, D. V.; Shastin, V. N. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. DLR Institute of Optical Sensor Systems (Germany)
3. Humboldt University of Berlin, Institute of Physics (Germany)

Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO{sub 2} laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by A{sup +} centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

• OSTI ID: 22649671
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
BORON
CARBON DIOXIDE LASERS
CRYSTAL STRUCTURE
DOPED MATERIALS
EXCITATION
HOLES
MODULATION
PHOTOIONIZATION
PHOTON EMISSION
SILICON
STRESSES
TEMPERATURE RANGE 0273-0400 K