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Title: Magnetospectroscopy of double HgTe/CdHgTe quantum wells

Journal Article · · Semiconductors
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  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM (France)
  3. Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA (France)
  4. Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.

OSTI ID:
22649662
Journal Information:
Semiconductors, Vol. 50, Issue 11; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English