Electroluminescence properties of LEDs based on electron-irradiated p-Si

Journal Article · Mon Feb 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S106378261602024X· OSTI ID:22645609

Shtel’makh, K. F.; Kalyadin, A. E.; Aruev, P. N.; Zabrodskiy, V. V.; Shek, E. I. ^[1]; Yang, D. ^[2]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2. Zhejiang University, State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering (China)

The electroluminescence (EL) in n{sup +}–p–p{sup +} light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current are examined.

• OSTI ID: 22645609
• Journal Information: Semiconductors, Vol. 50, Issue 2; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
DIAGRAMS
DOPED MATERIALS
ELECTROLUMINESCENCE
ELECTRONS
IRRADIATION
LAYERS
LIGHT EMITTING DIODES
PHOSPHORUS
POLYCRYSTALS
P-TYPE CONDUCTORS
SILICON