Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616030234· OSTI ID:22645599

Frolov, D. S.; Zubkova, A. V. ^[1]; Levina, E. E. ^[2]; Zubkov, V. I.; Solomonov, A. V. ^[1]; Sterlyadkin, O. K.; Sorokin, S. A. ^[2]

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1. St. Petersburg State Electrotechnical University “LETI” (Russian Federation)
2. JSC National Research Institute “Electron” (Russian Federation)

The method of electrochemical capacitance–voltage profiling is used to study boron-implanted silicon structures for CCD matrices with backside illumination. A series of specially prepared structures with different energies and doses of ion implantation and also with various materials used for the coating layers (aluminum, silicon oxide, and their combinations) is studied. The profiles of the depth distribution of majority charge carriers of the studied structures are obtained experimentally. Also, using the Poisson equation and the Fredholm equation of the first kind, the distributions of the charge-carrier concentration and of the electric field in the structures are calculated. On the basis of the analysis and comparison of theoretical and experimental concentration profiles, recommendations concerning optimization of the structures’ parameters in order to increase the value of the pulling field and decrease the effect of the surface potential on the transport of charge carriers are suggested.

• OSTI ID: 22645599
• Journal Information: Semiconductors, Vol. 50, Issue 3; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
BORON
CAPACITANCE
CHARGE CARRIERS
CHARGE-COUPLED DEVICES
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
FREDHOLM EQUATION
ILLUMINANCE
ION IMPLANTATION
MATRIX MATERIALS
POISSON EQUATION
SILICON
SILICON OXIDES
SPATIAL DISTRIBUTION
SURFACE POTENTIAL