Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616030040· OSTI ID:22645592

Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. ^[1]

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1. Belarusian State University of Information and RadioElectronics (Belarus)

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

• OSTI ID: 22645592
• Journal Information: Semiconductors, Vol. 50, Issue 3; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ASPECT RATIO
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTROCHEMISTRY
ELECTRODEPOSITION
LAYERS
NANOCOMPOSITES
NANOSTRUCTURES
NICKEL OXIDES
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
ZINC OXIDES