Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se{sub 2} thin-film solar cells
- Chernivtsi National University (Ukraine)
Optical and recombination losses in a Cu(In,Ga)Se{sub 2} thin-film solar cell with a band gap of 1.36–1.38 eV are theoretically analyzed. The optical transmittance of the ZnO and CdS layers through which the radiation penetrates into the absorbing layer is determined. Using optical constants, the optical loss caused by reflection at the interfaces (7.5%) and absorption in the ZnO and CdS layers (10.2%) are found. To calculate the recombination loss, the spectral distribution of the quantum efficiency of CdS/CuIn{sub 1–x}Ga{sub x}Se{sub 2} is investigated. It is demonstrated that, taking the drift and diffusion components of recombination at the front and rear surfaces of the absorber into account, the quantum efficiency spectra of the investigated solar cell can be analytically described in detail. The real parameters of the solar cell are determined by comparing the calculated results and experimental data. In addition, the losses caused by the recombination of photogenerated carriers at the front and rear surfaces of the absorbing layer (1.8% and <0.1%, respectively), at its neutral part (7.6%), and in the space-charge region of the p–n heterojunction (1.0%) are determined. A correction to the parameters of Cu(In,Ga)Se{sub 2} is proposed, which enhances the charge-accumulation efficiency.
- OSTI ID:
- 22645559
- Journal Information:
- Semiconductors, Vol. 50, Issue 4; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION
BUILDUP
CADMIUM SULFIDES
COMPARATIVE EVALUATIONS
COPPER SELENIDE SOLAR CELLS
DIFFUSION
GALLIUM SELENIDES
HETEROJUNCTIONS
INDIUM SELENIDE SOLAR CELLS
INTERFACES
LAYERS
P-N JUNCTIONS
QUANTUM EFFICIENCY
RECOMBINATION
REFLECTION
SPACE CHARGE
SURFACES
THIN FILMS
ZINC OXIDES