Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
- Cree Inc., 4600 Silicon Dr. (United States)
The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm{sup 2} at–80°C and 3000 A/cm{sup 2} at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltage characteristics are also measured at a temperature of 77 K.
- OSTI ID:
- 22645539
- Journal Information:
- Semiconductors, Vol. 50, Issue 5; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes